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Figure 5
Extraction of the Si L edges in Si (top) and SiO2 (bottom) for q = 3.15 a.u. by subtraction of the valence asymmetry (VA) corrected valence profile (VP). The sum of the core and valence contributions show good qualitative agreement in the case of SiO2 and sufficient agreement in the case of Si with the experiment, though in the near-edge region the HF profiles are significantly larger than the experiment. For SiO2 the offset between the valence profile and the intensity of the experiment before the edge onset can be attributed to EXAFS-like oscillations of the O LI edge. This figure is in color in the electronic version of this paper.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 15| Part 2| February 2008| Pages 162-169
doi:10.1107/S0909049508001696
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