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Figure 6
Evolution of the parasitic scattering background as a function of etching time of the first analyzer crystal after optical polishing. Here a monolithic Si-220 channel-cut crystal is used, whereas a Si-220 double-crystal set-up is installed as conditioning crystal (`hybrid system'). After the third etching, the background level did not improve any further. The concentrations are given as the volume ratio of hydrofluoric acid and nitric acid.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 15| Part 4| May 2008| Pages 341-349
doi:10.1107/S0909049508008960
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