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Figure 1
(a) Structure of the detector panel. Amorphous silicon is deposited on a monolithic glass substrate. A photodiode and neighboring TFT form a unit element on the detector sensor array. The CsI(Tl) phosphor is deposited directly on top of the diode array. (b) Matrix addressing readout scheme of the sensor array. The detector is partitioned into two halves, and each half has its own scan line control and column readout circuit. One whole row is read at the same time, and which row is being read at the moment is determined by the scan line control signal. (c) A GE 41RT system is shown in a strain measurement set-up. It consists of a detector sensor panel, a power supply and a chiller.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 15| Part 5| July 2008| Pages 477-488
doi:10.1107/S090904950801755X
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