view article

Figure 9
CCD frame measured in GIXD geometry for a multilayered InGaAs QD sample collected in the vicinity of the GaAs 022 substrate reflection (αi = 0.5°). T = 30 mm, D = 1000 mm, s2 = 1 mm. Besides the substrate reflection (S), the intensity distribution is caused by the sample surface and interfaces (CTR), the inhomogeneous strain distribution (W) and the spatial ordering (P) of the QDs.

Journal logoJOURNAL OF
ISSN: 1600-5775
Follow J. Synchrotron Rad.
Sign up for e-alerts
Follow J. Synchrotron Rad. on Twitter
Follow us on facebook
Sign up for RSS feeds