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Figure 5
Observed dependence of the etched depth on SR exposure (a), and etching rate on the XeF2 pressure (b). A, B and C are measured at a XeF2 pressure of 0.5, 0.3 and 0.1 torr, respectively. The photoemission current measured by the Pt detector was ∼55 µA.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 17| Part 1| January 2010| Pages 69-74
https://doi.org/10.1107/S0909049509045658
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