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Figure 6
Optical microscope picture of the pattern formed on the PDMS substrate surface by 10 min of SR etching using the copper mesh with 400 wires per inch as a contact mask with the conditions of 0.4 torr XeF2 gas and 110 mA ring current. The etching chamber was evacuated for about 2 h before etching. The SR beam was attenuated to about 13% by the slit and the measured photoemission current was 30 µA. The measured depths of the holes formed by the etching was ∼40 µm.

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