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Figure 1
A high-level schematic of the pixel architecture. Photo-charge (Isig) from the reverse-biased diode is integrated across Cint. When the comparator senses a near-to-overflow condition, a charge removal operation, which increments a count in the 18-bit counter, is triggered. The pixel output at the end of an exposure is the combination of the digital counts (NΔQ) and the analog residual (Voutp) (Schuette, 2008BB24).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 18| Part 2| March 2011| Pages 148-156
https://doi.org/10.1107/S0909049510045607
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