Figure 3
Variations of reflected Ir (solid line) and forward-diffracted Ifd (dashed line) intensities as a function of = , where is the incident angle and = 45°. Calculations were performed using the XOP 2.11 package (Dejus & Sanchez del Rio, 1996) at E = 8.39 keV for a symmetric Si(511) oriented in (a) Laue geometry with a crystal thickness t = 19 µm and (b) Bragg geometry with t = 6 µm. |