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Figure 1
Model with three interface traps used to calculate the C/G–V curves for the MOS capacitors. The symbols and the methods used to determine the parameters are described in the text.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 19| Part 3| March 2012| Pages 340-346
doi:10.1107/S0909049512002348
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