Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon

Zhang, J.; Pintilie, I.; Fretwurst, E.; Klanner, R.; Perrey, H.; Schwandt, J.

doi:10.1107/S0909049512002348

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Figure 2
Comparison of the measured to the calculated C–V and G–V curves (parallel mode) of a MOS capacitor irradiated to 10 MGy (12 keV X-rays) for frequencies between 1 and 100 kHz using the model displayed in Fig. 1

. (a) C–V curves, (b) G–V curves.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 19| Part 3| March 2012| Pages 340-346

doi:10.1107/S0909049512002348

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