Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon

Zhang, J.; Pintilie, I.; Fretwurst, E.; Klanner, R.; Perrey, H.; Schwandt, J.

doi:10.1107/S0909049512002348

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

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Figure 3
(a) C–V and (b) G–V curves of the MOS capacitors as a function of dose (12 keV X-rays) measured at 1 kHz and 10 kHz (full and open symbols) 20 min after the irradiation.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 19| Part 3| March 2012| Pages 340-346

doi:10.1107/S0909049512002348

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