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Figure 4
(a) C–V curves for 1 kHz of the MOS capacitor irradiated to 5 MGy after annealing at 353 K for 30 min biased from 0 V to different maximum voltages. (b) The corresponding TDRC spectra. The voltage shifts and the increase of the TDRC signal are evidence for the injection of holes into the border traps, when the capacitor is biased to strong inversion.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 19| Part 3| March 2012| Pages 340-346
doi:10.1107/S0909049512002348
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