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Figure 5
(a) TDRC spectrum for a MOS capacitor irradiated to 100 MGy with a fit by three dominant interface trap levels. (b) The shapes of the three dominant interface trap levels as a function of their position in the silicon band gap measured from the conduction band.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 19| Part 3| March 2012| Pages 340-346
doi:10.1107/S0909049512002348
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