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Figure 6
TDRC spectrum for a MOS capacitor fabricated on 〈111〉 silicon irradiated to 4.8 MGy after annealing for 32 h at 353 K. The signal owing to the Dit2 state is significantly reduced owing to annealing. |
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Figure 6
TDRC spectrum for a MOS capacitor fabricated on 〈111〉 silicon irradiated to 4.8 MGy after annealing for 32 h at 353 K. The signal owing to the Dit2 state is significantly reduced owing to annealing. |