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Figure 6
(a) SEM image of a hexagonally patterned silicon substrate. (b) Scanning force microscope image of the in-plane block copolymer structure adjacent to the edge of the confining well. (c) GISAXS pattern taken at an incident angle of 0.195° and an in-plane angle Φ = 0°. (d) I(2θ,Φ) constructed from the integrated line profiles like that defined by the two horizontal white lines shown in (c). (e) is a I(Φ) line-cut for the (10) diffraction. (f) shows the (11) and (20) in-plane diffraction profiles centered at the (11) and (20) peak positions. The dotted line is the resolution function. Figure adapted with permission from Stein et al. (2007bBB33). Copyright (2007) American Chemical Society.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 19| Part 4| June 2012| Pages 627-636
doi:10.1107/S0909049512022017
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