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![[Figure 4]](hf5198fig4mag.jpg)
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Figure 4
Real and imaginary parts of the Si and SiO2 susceptibility in the vicinity of the L2,3 absorption edges of Si for three layers in our structure. Dashed lines (blue) for Si and SiO2 present data from the tables of Henke et al. (1993  ); thin solid lines (magenta) for SiO2 are the results from Filatova et al. (1999); dash-dotted lines (green) are the absorption data from Kasrai et al. (1996), normalized to the absolute values of Henke et al. (1993) `at the tails'; dotted lines (dark blue) for Si are data from NIST (Chantler et al., 2009); bold lines (black) are data obtained by the fit of the experimental data for three layers in our structure. The shaded area denotes the energy range for the fit of the glancing incidence spectra. |
![[Figure 4]](hf5198fig4.jpg)
 | JOURNAL OF SYNCHROTRON RADIATION |
ISSN: 1600-5775
