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Figure 3
Ray-tracing simulation performed at 5 eV, i.e. for a maximum divergence of 0.4 mrad at the undulator level, at the entrance slit level, showing a throughput of 63% in a 10 µm entrance slit. Dimensions are in µm. |
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Figure 3
Ray-tracing simulation performed at 5 eV, i.e. for a maximum divergence of 0.4 mrad at the undulator level, at the entrance slit level, showing a throughput of 63% in a 10 µm entrance slit. Dimensions are in µm. |