Figure 5
Displacement field (upper row) and shear stress (second row) simulated by the finite-element method using COMSOL's Multiphysics, three-dimensional reciprocal-space maps calculated from the displacement fields by fast Fourier transformation (third row), and (qx, qz) cuts through the 3D-RSMs at central qy (fourth row) for (a) a SiGe island epitaxically grown on Si(001) and for samples with a distributed load of (b) 1 GPa, (c) 3 GPa and (d) 5 GPa applied on the island top facet. The position of the Si(004) Bragg reflection and the signal of the SiGe island are indicated by dashed lines. The dotted lines highlight the CTRs originating from the island side facets. |