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Figure 1
(Color online) Schematic representation of the lift-off procedure for thin films of single-crystalline (a) GexSi1–x, (b) InxGa1–xAs, (c) InxGa1–xP and (d) InP, (e) amorphous GaAs, the dielectric materials (f) SiO2 and Si3N4 embedded with nanoparticles, and single-crystalline (g) Ge and (h) Si, doped by ion implantation.

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