view article

Figure 3
(Color online) Calculated As implantation profile (triangles left) into a 3 µm Si film, using five energies [3500 keV (diamonds), 2300 keV (triangles down), 1500 keV (triangles up), 900 keV (circles) and 475 keV (squares)] with relative fluences of 34.4%, 22.4%, 19.0%, 14.5% and 9.7%, respectively.

Journal logoJOURNAL OF
ISSN: 1600-5775
Follow J. Synchrotron Rad.
Sign up for e-alerts
Follow J. Synchrotron Rad. on Twitter
Follow us on facebook
Sign up for RSS feeds