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Figure 3
(Color online) Calculated As implantation profile (triangles left) into a 3 µm Si film, using five energies [3500 keV (diamonds), 2300 keV (triangles down), 1500 keV (triangles up), 900 keV (circles) and 475 keV (squares)] with relative fluences of 34.4%, 22.4%, 19.0%, 14.5% and 9.7%, respectively.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 20| Part 3| April 2013| Pages 426-432
doi:10.1107/S0909049513005049
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