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Figure 4
k2-weighted EXAFS spectra of (a) Ga-doped Ge and (b) As-doped Si at the Ga K-edge and As K-edge, respectively (open symbols), versus the photoelectron wavenumber k; (c), (d) Fourier transforms of these EXAFS spectra [convoluted with a Hanning window (dashed line)] as shown in (a) and (b), respectively, as a function of the non-phase-corrected radial distance R from the absorber.

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