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Figure 2
Excitation light interference within a thin ion-implanted SiO2 film on a silicon substrate. (a) Electric field intensity map showing its dependence on depth and photon energy. (b) Excitation radiation spectral profile with interference fringes. (c) Depth distribution of the concentration of the emission centres (implanted ions).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 20| Part 3| March 2013| Pages 509-514
doi:10.1107/S0909049513002835
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