Journal of Synchrotron Radiation
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Figure 1
GISAXS patterns of Si-capped Ge nanodots in SX and HX regions. (
a
)
φ
= 0° for SX, (
b
)
φ
= 22.5° for SX, (
c
)
φ
= 0° for HX, (
d
)
φ
= 22.5° for HX.
JOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 21
|
Part 1
|
November 2014
|
Pages 161-164
doi:10.1107/S1600577513026088
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