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Figure 1
GISAXS patterns of Si-capped Ge nanodots in SX and HX regions. (aφ = 0° for SX, (b) φ = 22.5° for SX, (c) φ = 0° for HX, (d) φ = 22.5° for HX.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
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