|
Figure 4
GISAXS intensity calculated for the model nanodot structure, with spatially Si-capped Ge nanodots self-organized on Si(001) using DWBA. (a) φ = 0° for SX, (b) φ = 22.5° for SX, (c) φ = 0° for HX, (d) φ = 22.5° for HX. |
|
Figure 4
GISAXS intensity calculated for the model nanodot structure, with spatially Si-capped Ge nanodots self-organized on Si(001) using DWBA. (a) φ = 0° for SX, (b) φ = 22.5° for SX, (c) φ = 0° for HX, (d) φ = 22.5° for HX. |