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Figure 3
Si L2,3 XANES for SiOx/Si(111) structures with nc-Si. SiOx: initial film. N0: film without implantation and after annealing. N1: film after implantation with a dose of 6 × 1016  cm−2 and following annealing. N2: film after implantation with a dose of 9 × 1016 cm−2 and following annealing. N3: film after the implantation with a dose of 1.2 × 1017 cm−2 and following annealing.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 21| Part 1| December 2014| Pages 209-214
doi:10.1107/S1600577513030026
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