view article
Figure 12
ARPES images acquired on GaAs(100) protected by an amorphous As overlayer with the indicated hν. Development of the dispersive band structure signal from the GaAs underlayer with increase of hν shows the increase of the photoelectron λ (Kobayashi et al., 2012BB11).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 21| Part 1| November 2014| Pages 32-44
doi:10.1107/S1600577513019085
Follow J. Synchrotron Rad.
Sign up for e-alerts
E-alerts
Follow J. Synchrotron Rad. on Twitter
Twitter
Follow us on facebook
Facebook
Sign up for RSS feeds
RSS