Figure 3
(a) Reproduction of ESRF finite-element analysis results for the LN2-cooled Si monochromator for different slit openings. (b) The same ESRF results together with finite-element analysis results for Cornell ERL undulators, as a function of MLPD, under the surface heat assumption. The behavior of Si deformation in the `linear region' can be described by a universal curve as a function of MLPD. The intensity-weighted slope errors are for Cornell ERL beamlines only. Simulated changes of maximum temperature and slope error caused by non-uniform power are shown in (c) and (d) with exaggerated assumption of 25% power density drop at the edge of the power distribution, with the total power matching ERL cases studied in this paper. |