Figure 7
ANSYS results for Si crystal temperature (a) and slope errors at different sagittal positions, t, within the footprint (b) for a monochromator at 55 m from the source, for a 25 m planar undulator beamline working at K = 2.22, with machine current of 100 mA. With Si(111) set to the third harmonic, the maximum temperature is 176 K, the maximum displacement within the footprint area is 12.6 nm, and the intensity-weighted slope error is 3.4 µrad. The incident beam direction is shown with a red arrow. |