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Figure 5
Comparison of (a) measured and (b) simulated compensated (solid lines) and uncompensated (dashed lines) elastic lines of the Si(660) analyser. For the measured lines the FWHMs are 1.0 eV for the uncompensated line and 0.46 eV for the compensated one. For the simulated lines the FWHMs are 0.89 eV and 0.39 eV, respectively.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 21| Part 4| July 2014| Pages 762-767
doi:10.1107/S1600577514011163
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