Figure 1
(a) Schematic illustration of the set-up used for hard X-ray direct patterning. A synchrotron hard X-ray beam focused by a FZP illuminates a sample through a sectioned multilayer mask. (b) SEM image of a sectioned multilayer mask with 100 nm period. The dark region is transparent Si and the bright region is opaque WSi2. (c) Simulated X-ray wavefield downstream of the mask. |