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Figure 4
(a, b) SEM images of the line patterns of AgNPs on silicon nitride formed by hard X-ray exposure for 10 min and 18 min, respectively. A sectioned multilayer mask with 680 nm period was employed. (c) SEM image of AgNP line pattern obtained with a 100 nm-period multilayer mask. The sample was positioned at the quarter Talbot distance and AgNP lines of about 21 nm were obtained. (d) Line profile across the pattern obtained by integrating the contrast of the SEM in (c). The solid line is a fit to a periodic Gaussian function.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 1| January 2015| Pages 156-160
https://doi.org/10.1107/S1600577514023534
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