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Figure 2
Ion beam intensity distribution maps and corresponding etching mask apertures for both divergent and focused ion optics as marked at the top of each figure. The sample moves along the Y axis with the etching profile along the X axis.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 2| February 2015| Pages 458-460
doi:10.1107/S1600577515000624
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