The In situ growth of Nanostructures on Surfaces (INS) endstation of the ESRF BM32 beamline: a combined UHV–CVD and MBE reactor for in situ X-ray scattering investigations of growing nanoparticles and semiconductor nanowires

Cantelli, V.; Geaymond, O.; Ulrich, O.; Zhou, T.; Blanc, N.; Renaud, G.

doi:10.1107/S1600577515001605

Journal of Synchrotron Radiation Journal of
Synchrotron Radiation

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Figure 11
GIXD (α_i = 0.1°), during growth at 740 K: exposure to 0.3 sccm of Si₂H₆ for 90 min. The intensity was integrated in a ROI of size of 232 (H) × 18 (V) pixels, corresponding to a detector acceptance of 20 (H) mrad × 1.5 (V) mrad.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 22| Part 3| May 2015| Pages 688-700

https://doi.org/10.1107/S1600577515001605

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