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Figure 5
Schematic sample arrangement for in situ four-point bending measurements. The Si sample is scanned along direction xech, and at each position a Laue pattern is recorded on the CCD detector. A Ge single-crystal is used to calibrate the experimental geometry. The index `cam' stands for the detector frame and the index `ech' for the sample frame. Axis yech lies along the specimen length (longitudinal direction), xech along the specimen width (transverse direction), which is also the loading direction, and zech along the bending axis (normal direction).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 4| July 2015| Pages 980-994
https://doi.org/10.1107/S1600577515005780
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