Laue-DIC: a new method for improved stress field measurements at the micrometer scale

Petit, J.; Castelnau, O.; Bornert, M.; Zhang, F.G.; Hofmann, F.; Korsunsky, A.M.; Faurie, D.; Le Bourlot, C.; Micha, J.S.; Robach, O.; Ulrich, O.

doi:10.1107/S1600577515005780

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Figure 7
Profile of deviatoric elastic strain $[\varepsilon^{\rm{d}}_{{yy}}]$ in the in situ bent Si crystal, along direction x_ech, for three load levels: 0 N, 25 N, 50 N. (a) Absolute evaluation with the standard method described in §3.1

. (b) Relative evaluation with the standard method. (c) Relative evaluation with the new Laue-DIC method. Comparison with the asymptotic beam theory donated by `th'.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 22| Part 4| July 2015| Pages 980-994

https://doi.org/10.1107/S1600577515005780

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