Laue-DIC: a new method for improved stress field measurements at the micrometer scale

Petit, J.; Castelnau, O.; Bornert, M.; Zhang, F.G.; Hofmann, F.; Korsunsky, A.M.; Faurie, D.; Le Bourlot, C.; Micha, J.S.; Robach, O.; Ulrich, O.

doi:10.1107/S1600577515005780

Journal of Synchrotron Radiation Journal of
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Figure 9
Distribution of $[\sigma^{\rm{d}}_{{yy}}]$ in the Si single-crystal deformed under four-point bending, obtained by FE modeling at 50 N. The anisotropic elastic constants of Si crystal and the actual crystal orientation have been used.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 22| Part 4| July 2015| Pages 980-994

https://doi.org/10.1107/S1600577515005780

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