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Figure 2
Maps of integrated intensity of 004 diffraction in a line of Berkovich indents (from top, five 600 and five 500 mN loads) on the silicon wafer (001). XMDI data were collected at azimuthal angle 0° (a) and 180° (b). The same indent with 600 mN load is marked by a black frame in the two geometries.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 4| July 2015| Pages 1083-1090
https://doi.org/10.1107/S1600577515009650
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