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Figure 3
Maps of integrated intensity (a), peak width in arcsec (FWHM value) (b) and peak position shift in degree (c) of rocking curves around a 600 mN Berkovich indent in the silicon wafer. The data were extracted from XMDI images at the 004 diffraction and at azimuthal angle of 0°. (d) SEM image showing the surface morphology around the indent area. (e) Schematic of the indenter in top and side views. The indent is marked as a triangle in (a), (b) and (c) in side view. The arrows in (c) mark four {111} crystal planes. The marks 1–7 are explained in the text.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 4| July 2015| Pages 1083-1090
https://doi.org/10.1107/S1600577515009650
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