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Figure 6
A schematic of indent arrays on the silicon wafer, annealed at 1273 K (a). Indents are made with a Vickers or Berkovich indenter with a series of loads. The upper five indents are 2 N load made by a Vickers tip; the 5 × 5 array is from 100 mN to 500 mN loads made by a Berkovich indenter. (b) FWHM and (c) peak position-shift maps of the indented and annealed silicon wafer, extracted from the XMDI data collected from the 220 diffraction in transmission mode. A profile line is drawn across the indent in (b).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 22| Part 4| July 2015| Pages 1083-1090
https://doi.org/10.1107/S1600577515009650
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