Figure 2
HRXRD pattern of GaAs epilayer grown on Si substrate: (a) ω scans, (b) ω-2θ scans, where the curves labelled as 2A (2B), 4A (4B) and 6A (6B) are the diffraction patterns for the (002), (004), (006) reflections acquired using the laboratory (synchrotron) based X-ray source. Note that the (008) scans are acquired only at the synchrotron radiation source. The overlaying solid lines show the pseudo-Voigt fitting of the experimental data. |