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Figure 8
Detector bias voltage optimization. The measured count rate normalized to its maximum (triangles) and relative sharpness of the line spread function (squares) are shown as functions of sensor bias voltage. The inset displays a typical sharpness of the line spread function. The horizontal tick marks on the inset are 130 µm, or 1 pixel. For comparison, these measured parameters are shown alongside the calculated reverse-bias depletion depth normalized to the 520 µm pixel thickness (solid line) and the fraction of 8 keV X-rays absorbed within this depth (dashed line). The simple assumption that X-rays are only absorbed in the diode depletion region does not fully account for the count rate versus bias data, but is a contributing consideration.

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 23| Part 1| January 2016| Pages 196-205
doi:10.1107/S1600577515018044
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