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Figure 2
Topographic images of (a) the sapphire wafer grown using the Kyropoulos method (crystal thickness 0.423 mm) and (b) the optical grade sapphire wafer grown using the heat exchanger method (crystal thickness 1.0 mm). |
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Figure 2
Topographic images of (a) the sapphire wafer grown using the Kyropoulos method (crystal thickness 0.423 mm) and (b) the optical grade sapphire wafer grown using the heat exchanger method (crystal thickness 1.0 mm). |