Figure 6
Simulated temperature in a nanowire transistor with 100 nm-thick Au contacts, as viewed along the beam direction, the z-axis. The beam properties are the same as in Fig. 3(a). (a) Drawing of the sample. (b) Temperature when the beam is incident at the centre of the nanowire at x = 0. (c) Temperature when the beam is incident at the left contact, at x = −1 µm. The same colour scale was used in (b) and (c). |