Silicon carbide X-ray beam position monitors for synchrotron applications

Nida, S.; Tsibizov, A.; Ziemann, T.; Woerle, J.; Moesch, A.; Schulze-Briese, C.; Pradervand, C.; Tudisco, S.; Sigg, H.; Bunk, O.; Grossner, U.; Camarda, M.

doi:10.1107/S1600577518014248

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Figure 9
(a) Faster dynamics of the 4H-SiC XBPM (unbiased) compared with pc-diamond (biased at 30 V). (b) Linearity of 4H-SiC XBPMs in comparison with silicon diode. Both measurements are performed using a 12.4 keV photon energy and 6 × 10¹¹ photons s⁻¹ flux beam at the X06SA/PX1 beamline.

JOURNAL OF
SYNCHROTRON
RADIATION

ISSN: 1600-5775

Volume 26| Part 1| January 2019| Pages 28-35

https://doi.org/10.1107/S1600577518014248

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