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Figure 3
Applied bias voltage variation. (a) Map representing the XBIC and the spatial IQE, S(x), profiles across the InGaP nanowire as a function of applied bias. The drawing indicates the nominal segment lengths. (b) XBIC and S(x) profiles along the InGaP nanowire at a few selected biases. (c) The peak and the average S(x) within the middle segments versus applied bias. (d) The decay lengths Ll and Lr of InP2 and InGaP nanowires versus applied bias, including linear fits. The error bars are a result of the decay length fitting (Fig. S1).

Journal logoJOURNAL OF
SYNCHROTRON
RADIATION
ISSN: 1600-5775
Volume 26| Part 1| January 2019| Pages 102-108
https://doi.org/10.1107/S1600577518015229
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