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Figure 3
Rietveld refinement of the neutron diffraction patterns of C4D4S at (a) 155 K and (b) 1.5 K (experimental data: open circles, calculated profile: continuous line, allowed Bragg reflections: vertical marks; the difference between the experimental and calculated profiles is displayed at the bottom of each graph). Insets: corresponding thiophene C4D4S unit showing the displacement ellipsoids, calculated from the TLS matrix coefficients, at 50% probability.

Journal logoSTRUCTURAL SCIENCE
CRYSTAL ENGINEERING
MATERIALS
ISSN: 2052-5206
Volume 64| Part 5| September 2008| Pages 589-595
doi:10.1107/S0108768108015103
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