Download citation
Download citation
link to html
In the title compound, C24H26SSi2, the fused ring system plus the two Si atoms are coplanar, consistent with planar triphenyl­ene but contrary to bowl-shaped triphenyl­eno[1,12-bcd:4,5-b'c'd':8,9-b''c''d'']trithio­phene. The bond alternation pattern of the C-C bonds in the title compound is similar to that found in triphenyl­eno[1,12-bcd:4,5-b'c'd':8,9-b''c''d'']trithio­phene, although the lengths of the C-C bonds around the central and thio­phene rings of the title compound are slightly different from the corresponding bonds of triphenyl­eno[1,12-bcd:4,5-b'c'd':8,9-b''c''d'']trithio­phene.

Supporting information

cif

Crystallographic Information File (CIF) https://doi.org/10.1107/S1600536807022337/fl2130sup1.cif
Contains datablocks global, I

hkl

Structure factor file (CIF format) https://doi.org/10.1107/S1600536807022337/fl2130Isup2.hkl
Contains datablock I

CCDC reference: 651454

Key indicators

  • Single-crystal X-ray study
  • T = 103 K
  • Mean [sigma](C-C) = 0.002 Å
  • R factor = 0.035
  • wR factor = 0.089
  • Data-to-parameter ratio = 14.9

checkCIF/PLATON results

No syntax errors found



Alert level C PLAT066_ALERT_1_C Predicted and Reported Transmissions Identical . ?
0 ALERT level A = In general: serious problem 0 ALERT level B = Potentially serious problem 1 ALERT level C = Check and explain 0 ALERT level G = General alerts; check 1 ALERT type 1 CIF construction/syntax error, inconsistent or missing data 0 ALERT type 2 Indicator that the structure model may be wrong or deficient 0 ALERT type 3 Indicator that the structure quality may be low 0 ALERT type 4 Improvement, methodology, query or suggestion 0 ALERT type 5 Informative message, check

Comment top

The structure of triphenyleno[1,12-bcd]thiophene (2) where one of the three bay regions of triphenylene (4) is connected by a sulfur bridge is of interest in terms of comparison to the bowl shaped triphenyleno[1,12-bcd:4,5 - b'c'd':8,9 - b"c"d"]trithiophene (3) (Imamura et al., 1999) (Fig. 3). Although the synthesis of triphenyleno[1,12-bcd]thiophene (2) and its derivatives has been already reported (Klemm and Lawrence, 1979; Klemm et al., 1987; Ashe, et al., 1990), no reports on the X-ray crystallographic analysis of (2) have appeared. This paper presents the synthesis and first X-ray crystallographic analysis of 3,5-bis(trimethyl- silyl)-triphenyleno[1,12-bcd]thiophene (1) having a triphenyleno[1,12-bcd]- thiophene (2) skeleton.

The X-ray structural analysis reveals that the fused ring system including the two silicon atoms of (1) is planar, consistent with the planar triphenylene (4) (Ahmed & Trotter, 1963) but contrary to the bowl shaped trithiophene derivative (3) (Imamura et al., 1999). A pattern of bond alternation of C—C bonds in (1) is similar to that found in (4), although the lengths of the C—C bonds around the central and thiophene rings of (1) are slightly different from those of the corresponding bonds of (4). The C5—C6 and C11—C12 distances (1.467 (2) and 1.465 (2) Å) are slightly longer than those of (4) (ca 1.44 Å), while the C17—C18 distance (1.412 (2) Å) is slightly shorter than the corresponding bonds of (4) (ca 1.44 Å) and 4,6-bis(trimethyl- silyl)dibenzothiophene (1.448 (2) Å) (Chantson et al., 2003). The angles of C4—C5—C6 and C11—C12—C13 are 127.45 (15) and 127.38 (15) °, respectively, larger than the corresponding angles of triphenylene (4) (Ahmed & Trotter, 1963) (ca 120 °), reflecting a formation of the thiophene ring in (1).

Related literature top

Synthesis of (2) and its derivatives: Klemm & Lawrence (1979); Klemm et al. (1987); Ashe et al. (1990). X-ray study of (4): Ahmed & Trotter (1963). Related compounds: Chantson et al. (2003); Imamura et al. (1999).

Experimental top

To a hexane (4 ml) solution of triphenyleno[1,12-bcd]thiophene (2) was added TMEDA (0.12 ml, 0.8 mmol) and butyllithium (1.58 M in hexane; 0.51 ml, 0.80 mmol) at room temperature. The resulting mixture was heated at 60 °C for 3 h. After being cooled to room temperature, the mixture was treated with chlorotrimethylsilane (0.10 ml, 0.80 mmol). After the mixture was poured into water (50 ml), the organic layer was extracted with chloroform and dried over anhydrous magnesium sulfate. After removal of volatile substances, the residue was subjected to gel permeation chromatography to afford the title compound, 3,5-bis(trimethylsilyl)- triphenyleno[1,12-bcd]thiophene (1) (57 mg, 71%). Suitable crystals for X-ray crystallographic analysis were obtained by slow evaporation of a chloroform/ethanol solution of (1).

Refinement top

H atoms attached to Csp3 and Csp2 carbon atoms were treated as riding with C—H distances of 0.96 and 0.93 Å, while all the other atoms were refined anisotropically.

Structure description top

The structure of triphenyleno[1,12-bcd]thiophene (2) where one of the three bay regions of triphenylene (4) is connected by a sulfur bridge is of interest in terms of comparison to the bowl shaped triphenyleno[1,12-bcd:4,5 - b'c'd':8,9 - b"c"d"]trithiophene (3) (Imamura et al., 1999) (Fig. 3). Although the synthesis of triphenyleno[1,12-bcd]thiophene (2) and its derivatives has been already reported (Klemm and Lawrence, 1979; Klemm et al., 1987; Ashe, et al., 1990), no reports on the X-ray crystallographic analysis of (2) have appeared. This paper presents the synthesis and first X-ray crystallographic analysis of 3,5-bis(trimethyl- silyl)-triphenyleno[1,12-bcd]thiophene (1) having a triphenyleno[1,12-bcd]- thiophene (2) skeleton.

The X-ray structural analysis reveals that the fused ring system including the two silicon atoms of (1) is planar, consistent with the planar triphenylene (4) (Ahmed & Trotter, 1963) but contrary to the bowl shaped trithiophene derivative (3) (Imamura et al., 1999). A pattern of bond alternation of C—C bonds in (1) is similar to that found in (4), although the lengths of the C—C bonds around the central and thiophene rings of (1) are slightly different from those of the corresponding bonds of (4). The C5—C6 and C11—C12 distances (1.467 (2) and 1.465 (2) Å) are slightly longer than those of (4) (ca 1.44 Å), while the C17—C18 distance (1.412 (2) Å) is slightly shorter than the corresponding bonds of (4) (ca 1.44 Å) and 4,6-bis(trimethyl- silyl)dibenzothiophene (1.448 (2) Å) (Chantson et al., 2003). The angles of C4—C5—C6 and C11—C12—C13 are 127.45 (15) and 127.38 (15) °, respectively, larger than the corresponding angles of triphenylene (4) (Ahmed & Trotter, 1963) (ca 120 °), reflecting a formation of the thiophene ring in (1).

Synthesis of (2) and its derivatives: Klemm & Lawrence (1979); Klemm et al. (1987); Ashe et al. (1990). X-ray study of (4): Ahmed & Trotter (1963). Related compounds: Chantson et al. (2003); Imamura et al. (1999).

Computing details top

Data collection: SMART (Bruker, 2000); cell refinement: SMART (Bruker, 2000); data reduction: SAINT; program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to refine structure: SHELXL97 (Sheldrick, 1997); molecular graphics: SHELXTL (Sheldrick, 2001); software used to prepare material for publication: SHELXTL.

Figures top
[Figure 1] Fig. 1. Top view of the molecule of (1) showing the atom-labelling scheme. Displacement ellipsoids are drawn at the 40% probability level. All H atoms are omitted for clarity.
[Figure 2] Fig. 2. Side view of the molecule of (1). Displacement ellipsoids are drawn at the 40% probability level. All H atoms are omitted for clarity.
[Figure 3] Fig. 3. Triphenylene derivatives with sulfur bridges, (1), (2) and (3), and Triphenylene (4).
3,5-Bis(trimethylsilyl)triphenyleno[1,12-bcd]thiophene top
Crystal data top
C24H26SSi2F(000) = 856
Mr = 402.69Dx = 1.263 Mg m3
Monoclinic, P21/nMo Kα radiation, λ = 0.71073 Å
Hall symbol: -P2ynCell parameters from 7365 reflections
a = 7.0230 (3) Åθ = 2.4–27.9°
b = 14.4933 (7) ŵ = 0.27 mm1
c = 20.8358 (10) ÅT = 103 K
β = 92.707 (1)°Cube, colourless
V = 2118.44 (17) Å30.45 × 0.20 × 0.20 mm
Z = 4
Data collection top
Bruker SMART CCD area-detector
diffractometer
3730 independent reflections
Radiation source: fine-focus sealed tube3375 reflections with I > 2σ(I)
Graphite monochromatorRint = 0.044
φ and ω scansθmax = 25.0°, θmin = 1.7°
Absorption correction: multi-scan
(SADABS; Sheldrick, 1996)
h = 85
Tmin = 0.937, Tmax = 0.947k = 1716
12122 measured reflectionsl = 2424
Refinement top
Refinement on F2Primary atom site location: structure-invariant direct methods
Least-squares matrix: fullSecondary atom site location: difference Fourier map
R[F2 > 2σ(F2)] = 0.035Hydrogen site location: inferred from neighbouring sites
wR(F2) = 0.089H-atom parameters constrained
S = 1.05 w = 1/[σ2(Fo2) + (0.0479P)2 + 0.6989P]
where P = (Fo2 + 2Fc2)/3
3730 reflections(Δ/σ)max = 0.001
250 parametersΔρmax = 0.41 e Å3
0 restraintsΔρmin = 0.28 e Å3
Crystal data top
C24H26SSi2V = 2118.44 (17) Å3
Mr = 402.69Z = 4
Monoclinic, P21/nMo Kα radiation
a = 7.0230 (3) ŵ = 0.27 mm1
b = 14.4933 (7) ÅT = 103 K
c = 20.8358 (10) Å0.45 × 0.20 × 0.20 mm
β = 92.707 (1)°
Data collection top
Bruker SMART CCD area-detector
diffractometer
3730 independent reflections
Absorption correction: multi-scan
(SADABS; Sheldrick, 1996)
3375 reflections with I > 2σ(I)
Tmin = 0.937, Tmax = 0.947Rint = 0.044
12122 measured reflections
Refinement top
R[F2 > 2σ(F2)] = 0.0350 restraints
wR(F2) = 0.089H-atom parameters constrained
S = 1.05Δρmax = 0.41 e Å3
3730 reflectionsΔρmin = 0.28 e Å3
250 parameters
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and " goodness of fit S are based on F2, conventional R-factors R are based " " on F, with F set to zero for negative F2. The threshold expression of " F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based " on F2 are statistically about twice as large as those based on F, and R- " factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
S10.78242 (6)0.79366 (3)0.043181 (19)0.01977 (12)
Si10.78958 (7)0.77637 (3)0.21285 (2)0.02029 (13)
Si20.81669 (7)0.89550 (3)0.11203 (2)0.02055 (13)
C180.7605 (2)0.61485 (11)0.04568 (7)0.0181 (3)
C100.7419 (2)0.40497 (12)0.09549 (8)0.0236 (4)
H100.74780.41980.13880.028*
C170.7684 (2)0.63865 (11)0.01986 (8)0.0178 (3)
C110.7501 (2)0.47600 (11)0.04956 (8)0.0196 (4)
C20.7662 (2)0.67842 (12)0.15410 (8)0.0196 (3)
C160.7815 (2)0.73368 (11)0.03077 (8)0.0184 (3)
C50.7483 (2)0.52327 (11)0.06642 (8)0.0191 (3)
C60.7412 (2)0.45186 (11)0.01646 (8)0.0197 (4)
C120.7656 (2)0.57279 (11)0.06884 (8)0.0188 (3)
C80.7170 (3)0.29028 (12)0.01351 (9)0.0263 (4)
H80.70590.22870.00170.032*
C130.7782 (2)0.60757 (12)0.13114 (8)0.0229 (4)
H130.77780.56710.16580.028*
C10.7684 (2)0.69009 (11)0.08752 (8)0.0178 (3)
C30.7531 (2)0.58564 (12)0.17410 (8)0.0228 (4)
H30.75040.57410.21800.027*
C150.7926 (2)0.76950 (11)0.09278 (8)0.0196 (4)
C140.7914 (2)0.70169 (12)0.14167 (8)0.0228 (4)
H140.80000.72170.18380.027*
C70.7253 (2)0.35799 (12)0.03256 (8)0.0241 (4)
H70.72020.34140.07560.029*
C40.7440 (2)0.51047 (12)0.13279 (8)0.0231 (4)
H40.73500.45120.14940.028*
C210.7877 (3)0.73179 (13)0.29661 (8)0.0274 (4)
H21A0.83910.77770.32580.041*
H21B0.86380.67690.30030.041*
H21C0.65910.71780.30700.041*
C221.0565 (3)0.93544 (13)0.08124 (9)0.0279 (4)
H22A1.06991.00010.08990.042*
H22B1.15340.90170.10220.042*
H22C1.06950.92510.03570.042*
C191.0212 (3)0.83549 (14)0.20191 (9)0.0319 (4)
H19A1.03470.88610.23150.048*
H19B1.02470.85820.15870.048*
H19C1.12380.79260.20990.048*
C90.7252 (2)0.31397 (12)0.07794 (9)0.0263 (4)
H90.71940.26820.10930.032*
C230.7884 (3)0.91238 (13)0.20085 (8)0.0295 (4)
H23A0.78400.97720.21040.044*
H23B0.67230.88370.21670.044*
H23C0.89450.88490.22110.044*
C200.5925 (3)0.86107 (14)0.19876 (9)0.0346 (5)
H20A0.47230.83060.20270.052*
H20B0.59860.88650.15640.052*
H20C0.60510.90970.22990.052*
C240.6303 (3)0.96322 (13)0.07238 (9)0.0318 (4)
H24A0.63750.95090.02710.048*
H24B0.50670.94580.09000.048*
H24C0.65041.02780.07960.048*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
S10.0259 (2)0.0170 (2)0.0164 (2)0.00113 (16)0.00125 (17)0.00041 (15)
Si10.0239 (3)0.0207 (3)0.0163 (2)0.00040 (19)0.00071 (19)0.00153 (17)
Si20.0216 (3)0.0208 (3)0.0192 (2)0.00127 (19)0.00036 (18)0.00232 (18)
C180.0153 (8)0.0209 (9)0.0182 (8)0.0008 (7)0.0005 (6)0.0001 (6)
C100.0214 (9)0.0246 (9)0.0250 (9)0.0003 (7)0.0019 (7)0.0038 (7)
C170.0136 (8)0.0208 (8)0.0188 (8)0.0005 (6)0.0003 (6)0.0003 (7)
C110.0143 (8)0.0218 (9)0.0227 (9)0.0008 (7)0.0004 (6)0.0021 (7)
C20.0181 (8)0.0226 (8)0.0182 (8)0.0001 (7)0.0008 (6)0.0010 (7)
C160.0153 (8)0.0200 (8)0.0198 (8)0.0008 (7)0.0004 (6)0.0019 (7)
C50.0158 (8)0.0199 (8)0.0216 (8)0.0009 (7)0.0002 (6)0.0005 (6)
C60.0154 (8)0.0205 (8)0.0232 (9)0.0007 (7)0.0005 (6)0.0018 (7)
C120.0147 (8)0.0214 (8)0.0203 (8)0.0008 (7)0.0003 (6)0.0021 (7)
C80.0238 (9)0.0172 (9)0.0377 (11)0.0005 (7)0.0009 (8)0.0011 (7)
C130.0239 (9)0.0264 (9)0.0186 (8)0.0013 (7)0.0016 (7)0.0054 (7)
C10.0161 (8)0.0170 (8)0.0203 (8)0.0005 (6)0.0004 (6)0.0016 (6)
C30.0268 (9)0.0244 (9)0.0171 (8)0.0003 (7)0.0004 (7)0.0027 (7)
C150.0159 (8)0.0233 (9)0.0195 (8)0.0010 (7)0.0008 (6)0.0020 (7)
C140.0239 (9)0.0277 (9)0.0170 (8)0.0014 (7)0.0015 (7)0.0010 (7)
C70.0241 (9)0.0220 (9)0.0259 (9)0.0015 (7)0.0012 (7)0.0019 (7)
C40.0280 (9)0.0176 (8)0.0235 (9)0.0003 (7)0.0003 (7)0.0039 (7)
C210.0328 (10)0.0300 (10)0.0198 (9)0.0001 (8)0.0044 (7)0.0019 (7)
C220.0274 (9)0.0263 (9)0.0298 (10)0.0037 (8)0.0007 (8)0.0024 (7)
C190.0382 (11)0.0361 (11)0.0213 (9)0.0127 (9)0.0004 (8)0.0002 (8)
C90.0234 (9)0.0233 (9)0.0321 (10)0.0012 (7)0.0004 (7)0.0095 (8)
C230.0370 (10)0.0286 (10)0.0226 (9)0.0074 (8)0.0014 (8)0.0061 (7)
C200.0404 (11)0.0328 (10)0.0302 (10)0.0107 (9)0.0020 (9)0.0056 (8)
C240.0314 (10)0.0301 (10)0.0342 (10)0.0076 (8)0.0035 (8)0.0040 (8)
Geometric parameters (Å, º) top
S1—C11.7678 (16)C8—H80.9300
S1—C161.7688 (16)C13—C141.385 (2)
Si1—C211.8617 (18)C13—H130.9300
Si1—C191.8622 (19)C3—C41.388 (2)
Si1—C201.8629 (19)C3—H30.9300
Si1—C21.8766 (17)C15—C141.415 (2)
Si2—C241.8607 (19)C14—H140.9300
Si2—C221.8654 (18)C7—H70.9300
Si2—C231.8680 (18)C4—H40.9300
Si2—C151.8790 (17)C21—H21A0.9600
C18—C11.395 (2)C21—H21B0.9600
C18—C51.400 (2)C21—H21C0.9600
C18—C171.412 (2)C22—H22A0.9600
C10—C91.375 (2)C22—H22B0.9600
C10—C111.405 (2)C22—H22C0.9600
C10—H100.9300C19—H19A0.9600
C17—C121.397 (2)C19—H19B0.9600
C17—C161.400 (2)C19—H19C0.9600
C11—C61.424 (2)C9—H90.9300
C11—C121.465 (2)C23—H23A0.9600
C2—C11.398 (2)C23—H23B0.9600
C2—C31.412 (2)C23—H23C0.9600
C16—C151.398 (2)C20—H20A0.9600
C5—C41.397 (2)C20—H20B0.9600
C5—C61.467 (2)C20—H20C0.9600
C6—C71.407 (2)C24—H24A0.9600
C12—C131.399 (2)C24—H24B0.9600
C8—C71.372 (2)C24—H24C0.9600
C8—C91.389 (3)
C1—S1—C1692.28 (8)C16—C15—C14114.12 (15)
C21—Si1—C19108.62 (9)C16—C15—Si2124.59 (13)
C21—Si1—C20109.77 (9)C14—C15—Si2121.25 (12)
C19—Si1—C20108.93 (10)C13—C14—C15124.61 (16)
C21—Si1—C2110.16 (8)C13—C14—H14117.7
C19—Si1—C2108.56 (8)C15—C14—H14117.7
C20—Si1—C2110.75 (8)C8—C7—C6121.73 (16)
C24—Si2—C22109.05 (9)C8—C7—H7119.1
C24—Si2—C23109.07 (9)C6—C7—H7119.1
C22—Si2—C23110.61 (9)C3—C4—C5120.46 (15)
C24—Si2—C15110.21 (8)C3—C4—H4119.8
C22—Si2—C15108.49 (8)C5—C4—H4119.8
C23—Si2—C15109.41 (8)Si1—C21—H21A109.5
C1—C18—C5123.31 (15)Si1—C21—H21B109.5
C1—C18—C17114.27 (15)H21A—C21—H21B109.5
C5—C18—C17122.41 (15)Si1—C21—H21C109.5
C9—C10—C11121.54 (16)H21A—C21—H21C109.5
C9—C10—H10119.2H21B—C21—H21C109.5
C11—C10—H10119.2Si2—C22—H22A109.5
C12—C17—C16123.55 (15)Si2—C22—H22B109.5
C12—C17—C18122.67 (15)H22A—C22—H22B109.5
C16—C17—C18113.78 (14)Si2—C22—H22C109.5
C10—C11—C6118.41 (15)H22A—C22—H22C109.5
C10—C11—C12121.09 (15)H22B—C22—H22C109.5
C6—C11—C12120.50 (15)Si1—C19—H19A109.5
C1—C2—C3114.32 (15)Si1—C19—H19B109.5
C1—C2—Si1123.43 (12)H19A—C19—H19B109.5
C3—C2—Si1122.20 (12)Si1—C19—H19C109.5
C15—C16—C17121.49 (15)H19A—C19—H19C109.5
C15—C16—S1128.64 (13)H19B—C19—H19C109.5
C17—C16—S1109.86 (12)C10—C9—C8120.12 (16)
C4—C5—C18115.85 (15)C10—C9—H9119.9
C4—C5—C6127.38 (15)C8—C9—H9119.9
C18—C5—C6116.76 (14)Si2—C23—H23A109.5
C7—C6—C11118.40 (15)Si2—C23—H23B109.5
C7—C6—C5120.88 (15)H23A—C23—H23B109.5
C11—C6—C5120.71 (15)Si2—C23—H23C109.5
C17—C12—C13115.61 (15)H23A—C23—H23C109.5
C17—C12—C11116.93 (15)H23B—C23—H23C109.5
C13—C12—C11127.45 (15)Si1—C20—H20A109.5
C7—C8—C9119.80 (16)Si1—C20—H20B109.5
C7—C8—H8120.1H20A—C20—H20B109.5
C9—C8—H8120.1Si1—C20—H20C109.5
C14—C13—C12120.61 (16)H20A—C20—H20C109.5
C14—C13—H13119.7H20B—C20—H20C109.5
C12—C13—H13119.7Si2—C24—H24A109.5
C18—C1—C2121.56 (15)Si2—C24—H24B109.5
C18—C1—S1109.79 (12)H24A—C24—H24B109.5
C2—C1—S1128.65 (13)Si2—C24—H24C109.5
C4—C3—C2124.49 (15)H24A—C24—H24C109.5
C4—C3—H3117.8H24B—C24—H24C109.5
C2—C3—H3117.8

Experimental details

Crystal data
Chemical formulaC24H26SSi2
Mr402.69
Crystal system, space groupMonoclinic, P21/n
Temperature (K)103
a, b, c (Å)7.0230 (3), 14.4933 (7), 20.8358 (10)
β (°) 92.707 (1)
V3)2118.44 (17)
Z4
Radiation typeMo Kα
µ (mm1)0.27
Crystal size (mm)0.45 × 0.20 × 0.20
Data collection
DiffractometerBruker SMART CCD area-detector
Absorption correctionMulti-scan
(SADABS; Sheldrick, 1996)
Tmin, Tmax0.937, 0.947
No. of measured, independent and
observed [I > 2σ(I)] reflections
12122, 3730, 3375
Rint0.044
(sin θ/λ)max1)0.595
Refinement
R[F2 > 2σ(F2)], wR(F2), S 0.035, 0.089, 1.05
No. of reflections3730
No. of parameters250
H-atom treatmentH-atom parameters constrained
Δρmax, Δρmin (e Å3)0.41, 0.28

Computer programs: SMART (Bruker, 2000), SAINT, SHELXS97 (Sheldrick, 1997), SHELXL97 (Sheldrick, 1997), SHELXTL (Sheldrick, 2001), SHELXTL.

 

Follow Acta Cryst. E
Sign up for e-alerts
Follow Acta Cryst. on Twitter
Follow us on facebook
Sign up for RSS feeds