supplementary materials


hk2478 scheme

Acta Cryst. (2008). E64, o1378    [ doi:10.1107/S160053680801917X ]

Bis(3-nitrophenyl) sulfone

W. Yao, F.-S. Li, D.-S. Yu, M.-J. Liu and J.-N. Zhu

Abstract top

The asymmetric unit of the title compound, C12H8N2O6S, an important diphenyl sulfone derivative, contains one half-molecule; a mirror plane passes through the SO2 group. The dihedral angle between the two symmetry-related benzene rings is 40.10 (13)°. An intramolecular C-H...O hydrogen bond results in the formation of a five-membered ring, which adopts an envelope conformation.

Comment top

The title compound, (I), is used for preparing 3,3'-diaminodiphenyl sulfone (Ayyangar et al., 1981). As part of our studies in this area, we report herein the synthesis and crystal structure of (I).

The asymmetric unit of (I) (Fig. 1) contains one half molecule. The bond lengths (Allen et al., 1987) and angles are within normal ranges. The dihedral angle between the two symmetry related bezene rings is 139.90 (13)°. The intramolecular C-H···O hydrogen bond (Table 1) results in the formation of a five-membered non-planar ring: (S/O1/C3/C4/H4A), in which it adopts envelope conformation, with O1 atom displaced by -0.494 (3) Å from the planes of the other ring atoms.

Related literature top

For related literature, see: Ayyangar et al. (1981); Amer et al. (1989). For bond-length data, see: Allen et al. (1987).

Experimental top

The title compound, (I), was prepared according to the literature method (Amer et al., 1989). Crystals suitable for X-ray analysis were obtained by dissolving (I) (0.2 g) in dichloroethane (25 ml) and evaporating the solvent slowly at room temperature for about 7 d.

Refinement top

H atoms were positioned geometrically, with C-H= 0.93 Å for aromatic H, and constrained to ride on their parent atoms, with Uiso(H) = 1.2Ueq(C).

Computing details top

Data collection: CAD-4 Software (Enraf–Nonius, 1989); cell refinement: CAD-4 Software (Enraf–Nonius, 1989); data reduction: XCAD4 (Harms & Wocadlo, 1995); program(s) used to solve structure: SHELXS97 (Sheldrick, 2008); program(s) used to refine structure: SHELXL97 (Sheldrick, 2008); molecular graphics: ORTEP-3 for Windows (Farrugia, 1997); software used to prepare material for publication: SHELXL97 (Sheldrick, 2008).

Figures top
[Figure 1] Fig. 1. The molecular structure of the title molecule, with the atom-numbering scheme [symmetry code: (') -x, y, z]. Hydrogen bonds are shown as dashed lines.
Bis(3-nitrophenyl) sulfone top
Crystal data top
C12H8N2O6SF000 = 316
Mr = 308.27Dx = 1.583 Mg m3
Orthorhombic, Pmn21Mo Kα radiation
λ = 0.71073 Å
Hall symbol: P 2ac -2Cell parameters from 25 reflections
a = 20.260 (4) Åθ = 10–13º
b = 5.9380 (12) ŵ = 0.28 mm1
c = 5.3770 (11) ÅT = 294 (2) K
V = 646.9 (2) Å3Block, light yellow
Z = 20.30 × 0.20 × 0.10 mm
Data collection top
Enraf–Nonius CAD-4
diffractometer
Rint = 0.028
Radiation source: fine-focus sealed tubeθmax = 25.2º
Monochromator: graphiteθmin = 2.0º
T = 294(2) Kh = 24→24
ω/2θ scansk = 7→0
Absorption correction: ψ scan
(North et al., 1968)
l = 0→6
Tmin = 0.920, Tmax = 0.9723 standard reflections
1304 measured reflections every 120 min
674 independent reflections intensity decay: none
624 reflections with I > 2σ(I)
Refinement top
Refinement on F2H-atom parameters constrained
Least-squares matrix: full  w = 1/[σ2(Fo2) + (0.06P)2 + 0.078P]
where P = (Fo2 + 2Fc2)/3
R[F2 > 2σ(F2)] = 0.032(Δ/σ)max < 0.001
wR(F2) = 0.086Δρmax = 0.25 e Å3
S = 1.00Δρmin = 0.22 e Å3
674 reflectionsExtinction correction: SHELXL97 (Sheldrick, 2008), Fc*=kFc[1+0.001xFc2λ3/sin(2θ)]-1/4
101 parametersExtinction coefficient: 0.069 (8)
Primary atom site location: structure-invariant direct methodsAbsolute structure: Flack (1983), with no Friedel pairs
Secondary atom site location: difference Fourier mapFlack parameter: 0.11 (15)
Hydrogen site location: inferred from neighbouring sites
Crystal data top
C12H8N2O6SV = 646.9 (2) Å3
Mr = 308.27Z = 2
Orthorhombic, Pmn21Mo Kα
a = 20.260 (4) ŵ = 0.28 mm1
b = 5.9380 (12) ÅT = 294 (2) K
c = 5.3770 (11) Å0.30 × 0.20 × 0.10 mm
Data collection top
Enraf–Nonius CAD-4
diffractometer
624 reflections with I > 2σ(I)
Absorption correction: ψ scan
(North et al., 1968)
Rint = 0.028
Tmin = 0.920, Tmax = 0.9723 standard reflections
1304 measured reflections every 120 min
674 independent reflections intensity decay: none
Refinement top
R[F2 > 2σ(F2)] = 0.032H-atom parameters constrained
wR(F2) = 0.086Δρmax = 0.25 e Å3
S = 1.00Δρmin = 0.22 e Å3
674 reflectionsAbsolute structure: Flack (1983), with no Friedel pairs
101 parametersFlack parameter: 0.11 (15)
? restraints
Special details top

Geometry. All e.s.d.'s (except the e.s.d. in the dihedral angle between two l.s. planes) are estimated using the full covariance matrix. The cell e.s.d.'s are taken into account individually in the estimation of e.s.d.'s in distances, angles and torsion angles; correlations between e.s.d.'s in cell parameters are only used when they are defined by crystal symmetry. An approximate (isotropic) treatment of cell e.s.d.'s is used for estimating e.s.d.'s involving l.s. planes.

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > 2sigma(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2) top
xyzUiso*/Ueq
S0.50000.08254 (19)0.9607 (2)0.0438 (4)
N0.68253 (13)0.0542 (4)0.2895 (5)0.0422 (6)
O10.50000.1563 (5)0.9183 (9)0.0626 (12)
O20.50000.1705 (7)1.2095 (7)0.0663 (11)
O30.66204 (14)0.1343 (4)0.2403 (5)0.0660 (8)
O40.72681 (13)0.1460 (4)0.1767 (5)0.0599 (7)
C10.64732 (14)0.4956 (5)0.7589 (8)0.0451 (8)
H1B0.66380.63510.80720.054*
C20.59364 (14)0.4066 (5)0.8822 (7)0.0410 (7)
H2B0.57410.48421.01310.049*
C30.56929 (13)0.1978 (5)0.8063 (5)0.0347 (7)
C40.59799 (14)0.0791 (4)0.6139 (6)0.0341 (6)
H4A0.58160.06030.56480.041*
C50.65163 (13)0.1743 (5)0.4973 (6)0.0356 (6)
C60.67683 (14)0.3828 (4)0.5672 (7)0.0410 (7)
H6A0.71300.44420.48520.049*
Atomic displacement parameters (Å2) top
U11U22U33U12U13U23
S0.0316 (5)0.0543 (6)0.0455 (7)0.0000.0000.0169 (6)
N0.0448 (13)0.0450 (14)0.0367 (14)0.0071 (11)0.0003 (12)0.0003 (11)
O10.0408 (17)0.0472 (16)0.100 (3)0.0000.0000.032 (2)
O20.049 (2)0.114 (3)0.0364 (18)0.0000.0000.016 (2)
O30.0784 (19)0.0580 (15)0.0615 (18)0.0025 (12)0.0081 (16)0.0211 (14)
O40.0545 (14)0.0738 (16)0.0512 (15)0.0009 (12)0.0190 (12)0.0005 (14)
C10.0374 (14)0.0341 (14)0.064 (2)0.0016 (12)0.0022 (16)0.0079 (16)
C20.0370 (15)0.0400 (15)0.0460 (17)0.0078 (12)0.0021 (14)0.0055 (14)
C30.0274 (12)0.0381 (14)0.0386 (16)0.0013 (11)0.0031 (12)0.0081 (13)
C40.0341 (13)0.0323 (12)0.0359 (16)0.0004 (11)0.0049 (13)0.0041 (14)
C50.0326 (13)0.0370 (13)0.0373 (14)0.0067 (10)0.0038 (13)0.0026 (13)
C60.0353 (14)0.0364 (14)0.0511 (19)0.0024 (12)0.0046 (15)0.0033 (14)
Geometric parameters (Å, °) top
S—O21.436 (4)C1—H1B0.9300
S—O11.437 (3)C2—C31.395 (4)
S—C31.769 (3)C2—H2B0.9300
S—C3i1.769 (3)C3—C41.380 (4)
N—O41.212 (4)C4—C51.376 (4)
N—O31.223 (3)C4—H4A0.9300
N—C51.466 (4)C5—C61.391 (4)
C1—C61.367 (5)C6—H6A0.9300
C1—C21.379 (4)
O2—S—O1120.5 (3)C3—C2—H2B120.7
O2—S—C3107.24 (14)C4—C3—C2121.6 (3)
O1—S—C3107.92 (15)C4—C3—S119.2 (2)
O2—S—C3i107.24 (14)C2—C3—S119.2 (3)
O1—S—C3i107.92 (15)C5—C4—C3117.7 (3)
C3—S—C3i105.06 (18)C5—C4—H4A121.2
O4—N—O3123.7 (3)C3—C4—H4A121.2
O4—N—C5118.6 (3)C4—C5—C6122.2 (3)
O3—N—C5117.7 (3)C4—C5—N119.0 (3)
C6—C1—C2121.3 (3)C6—C5—N118.8 (3)
C6—C1—H1B119.3C1—C6—C5118.6 (3)
C2—C1—H1B119.3C1—C6—H6A120.7
C1—C2—C3118.6 (3)C5—C6—H6A120.7
C1—C2—H2B120.7
C6—C1—C2—C30.4 (5)S—C3—C4—C5179.7 (2)
C1—C2—C3—C40.6 (5)C3—C4—C5—C60.1 (4)
C1—C2—C3—S179.4 (2)C3—C4—C5—N179.0 (2)
O2—S—C3—C4152.5 (2)O4—N—C5—C4175.0 (3)
O1—S—C3—C421.3 (3)O3—N—C5—C45.2 (4)
C3i—S—C3—C493.6 (2)O4—N—C5—C63.9 (4)
O2—S—C3—C227.5 (3)O3—N—C5—C6175.9 (3)
O1—S—C3—C2158.6 (3)C2—C1—C6—C50.0 (5)
C3i—S—C3—C286.4 (3)C4—C5—C6—C10.3 (5)
C2—C3—C4—C50.3 (4)N—C5—C6—C1179.2 (3)
Symmetry codes: (i) −x+1, y, z.
Hydrogen-bond geometry (Å, °) top
D—H···AD—HH···AD···AD—H···A
C4—H4A···O10.932.582.928 (4)102
Table 1
Hydrogen-bond geometry (Å, °)
top
D—H···AD—HH···AD···AD—H···A
C4—H4A···O10.932.582.928 (4)102
references
References top

Allen, F. H., Kennard, O., Watson, D. G., Brammer, L., Orpen, A. G. & Taylor, R. (1987). J. Chem. Soc. Perkin Trans. 2, pp. S1–19.

Amer, A., El-Massry, A. M. & Pittman, C. U. (1989). Chem. Scr. 29, 351–352.

Ayyangar, N. R., Lugade, A. G., Nikrad, P. V. & Sharma, V. K. (1981). Synthesis, pp. 640–643.

Enraf–Nonius (1989). CAD-4 Software. Enraf–Nonius, Delft, The Netherlands.

Farrugia, L. J. (1997). J. Appl. Cryst. 30, 565.

Flack, H. D. (1983). Acta Cryst. A39, 876–881.

Harms, K. & Wocadlo, S. (1995). XCAD4. University of Marburg, Germany.

North, A. C. T., Phillips, D. C. & Mathews, F. S. (1968). Acta Cryst. A24, 351–359.

Sheldrick, G. M. (2008). Acta Cryst. A64, 112–122.