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Figure 8
Sequence of time-of-flight patterns from time channels 1–49 (silicon sample annealed for 500 h at 873 K and 1000 h at 773 K).

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 39| Part 1| February 2006| Pages 46-52
https://doi.org/10.1107/S0021889805033698
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