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Figure 1
2D GIXS pattern measured at αi = 0.20° for an SiOCH film deposited with a BTMSM flow rate ratio Rfr of 85% and annealed at 673 K. αi is the incident angle at which the X-ray beam impinges on the film surface; αf and 2θf are the exit angles of the X-ray beam with respect to the film surface and to the plane of incidence, respectively.

Journal logoJOURNAL OF
APPLIED
CRYSTALLOGRAPHY
ISSN: 1600-5767
Volume 40| Part s1| December 2007| Pages s614-s619
doi:10.1107/S0021889806054124
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